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| (R) BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. 3 1 2 T0-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot Visol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 80 80 5 8 12 0.2 29 1500 -65 to 150 150 Unit V V V A A A W V o o C C February 2003 1/4 BDX53BFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.3 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 80 V V CE = 40 V V EB = 5 V I C = 100 mA 80 Min. Typ. Max. 0.2 0.5 2 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE VF Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain IC = 3 A IC = 3 A IC = 3 A I B =12 mA I B =12 mA V CE = 3 V 750 1.8 2.5 2 2.5 V V Parallel Diode Forward I F = 3 A Voltage IF = 8 A 2.5 V V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 2/4 BDX53BFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 G 3/4 BDX53BFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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